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S.89-42
SIMON FRASER UNIVERSITY
MEMORANDUM
To:
?
Senate ?
From:
L. Salter
Chair, SOAP
Subject: ?
School of Engineering Science - ?
Date: ?
November 9, 1989
Curribulum Revision
Reference: SCUS 89-36
SOAP 89-27
Action undertaken by the Senate Committee on Academic Planning/Senate committee on
Undergraduate Studies gives rise to the following motion:
Motion:
"That Senate approve and recommend approval to the Board of Governors
as set forth in S.89-42 the proposed
New course ENSC 453 - 4 ?
Semiconductor Device Engineering."
I
U
 
SENATE COMMITTEE ON UNDERGRADUATE STUDIES
NEW COURSE PROPOSAL FORM
1.
Calendar Information ?
Department:
Engineering
Science
Abbreviation Code:_
ENSC Course Number:
453
?
Credit Hours: 4Vector: 3-0-2
Title of Course:
Semiconductor Device Engineering
Calendar Description of Course:
Design of semiconductor devices, quantitative
relationships
-ror ?
electrical, technological and material parameters,;
device modelling techniques, physical limitations for devices, engineering
'aspects of device integration and fabrication, interaction between devices
in the integrated circuit. The laboratory f6cusseS on measurement,
characterization, and modelling of semiconductor devices.
Nature of Course
?
Lectures/Labs
Prerequisites (or special instructions):
PHYS 365-3
?
I
What course (courses), if any, is being dropped from the calendar if this course is
approved:
2.
Scheduling
How frequently will
the
course be offered?
Every third semester''
Semester in which the course will first be offered?
Spring 1991
Which of your present faculty would be available to make the proposed offering
possible?
Jamal Deen, Marek Syrzycki
3. Objectives of the Course To
teach the students the operation, design, measure-
ment of semicorductor devices. With this background, the students will
be able to design a variety of integrated circuits and sensors in MOS
and bipolar technology. The modelling and characterization of devices
will alto be examined.
4.
Budgetary and Space Requirements (for information only)
What additional resources will be required In the following areas:
Faculty
None
Staff
None
Library
None
Audio Visual
?
None
Space
None
Equipment
None
5.
Approval
Date:
.
?
-
?
Chairman, S
SCUS 73-34b: (When completing this form, for instructions see Memorandum SCIJS 73-34a.
attach course outline).
F
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Simon Fraser University
MEMORANDUM
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From: ... ftE,Eriflt..MyJZyQKLJJfl................................
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Date:
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.
.
On 6 th
October, we met together to discuss details of the proposed Semiconductor Device Engineering course
(ENSC 453-4). During this meeting, the possible versions of the ENSC 453 were discussed. The participants of this
meeting agreed that the ENSC 453 should be based on two course sequence on Semiconductor Devices: Semicon-
ductor Devices Physics (PHYS 365) followed by Semiconductor Device Engineering (ENSC 453). The above sequence
was suggested by prof. D.George in his memo from 11 September. The ENSC 453 course requires PHYS 365 as a
prerequisite and does not overlap the contents of PHYS 365. We enclose the outline of the ENSC 453 accepted by
representatives from Engineering and Physics, as well as the outline of the PHYS 365 provided by Dr. R.F.Frindt.
Responding to our concerns about PHYS 385 as a prerequisite for PHYS 365, Dr. R.F.Fnndt declared that this
requirement can be cancelled for Engineering Science students
We recognize from your memo (26 September) that the ENSC 453 proposal was approved by FASUCC conditional
upon being free of any overlap. We did our best for removing this overlap and we suggest you to forward the approved
ENSC 453 proposal to SCUS as soon as possible...
Yours truly,
R.F.Frindt, M.Syrzyckl, J.Deen
C.C.
D.George, Dean of Applied Science
D.Geo'19e, Director, Engineering Science
?
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4
S4 -
oCT 3989
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1
 
7
ENSC 453-4: ?
SEMICONDUCTOR DEVICE ENGINEERING
Textbook: "Basic Integrated Circuit Engineering"
Author: D.J.Hamilton, W.G.Howard
Publisher: McGraw-Hill
Course Description:
Design of semiconductor devices, quantitative relationships between
electrical, technological and material parameters, device modeling
techniques, physical limitations for devices, engineering aspects of device
integration and fabrication,, interaction between devices in the integrated
circuit. The laboratory focussed .a measurement, characterization, and
modeling of semiconductor devices will be a part of the course.
Prerequisite: PI-IYS 365-3
Course Outline:
1.
Design of passive semiconductor devices
- linear and voltage-controlled resistors
- capacitors (MOS c., junction c., linear c.)
2.
Design of active semiconductor devices
- semiconductor diodes semiconductor controlled rectifiers
- bipolar junction transistors
- MOSFET's
- JFET's and MESFET's
3.
Modeling and simulation of semiconductor devices
- models of semiconductor devices in SPICE simulator
- extraction of model parameters from device measurements
- 2-D and 3-D models of semiconductor devices.
4.
Physical limitation of silicon devices
- material limitations in semiconductor devices
- small-geometry effects and hot-carrier degradation in MOSFET's
- small geometry effects, high-level injection effects and parasitics in BJT's
5.
Engineering aspects of device integration
- technology-related limitations
- practical techniques for device isolation in IC's
.
3
 
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if
?
[1
I
SEMICONDUCTOR DEVICE PHYSICS
DAY
SPRING 1988
MU 9:30
Dr. R. Frindt
Office P8470
PHYSICS 365-3:
Textbook
?
"Solid State Electronic Devices"
(2nd Ed ition)
Author: ?
Ben C. Streetman
Publisher: ?
Prentice Hall
Course Descri ot ion
Structure and properties of semiconductors, semiconductor
theory, theory and operation of semiconductor devices,
semiconductor device technology.
Prerequisite:
?
P}IYS 385-3
Course Outline
a)
Introduction to Condensed Matter Physics:
-the crystal lattice - phonons, energy bands
-semiconductors - electrons, holes, density-of states,
effective mass
-carrier concentration, doping, recombination
-the Fermi Ener
g
y, quasi-Fermi energies
-mobility, conductivity, Hall effect
-optical properties of semiconductors
b)
Semiconductor Devices:
-diodes (junction, Schottky, LED's, laser diodes,
photocells and photodiodes)
-JFET's and MOSFET's
-bipolar transistors
c)
Device Technology:
-crystal growth - (Czochralski , float-zoning, epitaxy)
-compound semiconductors, alloys
-doping - diffusion, implantation, annealing
-contacts
-integrated circuit technology - lithography, etching
ri
El
.

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